Metal-Organic Chemical Vapor Deposition Precursors: Diagnostic Check for Volatilization Thermodynamics of Scandium(III) β-Diketonates

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

Volatile Precursors for Films Deposition: Vapor Pressure, Structure and Thermodynamics

At present the processes of chemical vapour deposition (MO CVD) and physical vapour deposition (PVD) are widely used to obtain the layers of different materials. A possibility to obtain materials of the required composition (elementary, complex, composite, etc.) is determined by the chemical nature of a precursor. By now a set of criteria for the precursors to meet the MO CVD and PVD standards ...

Suppressing Nucleation in Metal-Organic Chemical Vapor Deposition of MoS2 Monolayers by Alkali Metal Halides.

Toward the large-area deposition of MoS2 layers, we employ metal-organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together with the Mo precursor prior to the start of the growth process results in increasing the lateral dimensions of single crystalline domains by...

Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN

of metal-organic chemical vapor deposition GaN Wei Zhang, Peichi Liu, Biyun Jackson, Tianshu Sun, Shyh-Jer Huang, Hsiao-Chiu Hsu, Yan-Kuin Su, Shoou-Jinn Chang, Lei Li, Ding Li, Lei Wang, XiaoDong Hu, and Y. H. Xie Department of Materials Science and Engineering, University of California Los Angeles, California 90095, USA Department of Physics, University of Maryland college park, Maryland 2074...

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve th...